Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. IRLL2703TRPBF
IRLL2703TRPBF
IRLL2703TRPBF
Favorite Products
Share:  

IRLL2703TRPBF

IRLL2703TRPBF
Infineon Technologies
MOSFET N-CH 30V 3.9A SOT223
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Vgs(th) (Max) @ Id
2.4V @ 250µA
Product Status
Obsolete
Vgs (Max)
±16V
Series
HEXFET®
Package
Tape & Reel (TR)^^Cut Tape (CT)
Power Dissipation (Max)
1W (Ta)
Current - Continuous Drain (Id) @ 25°C
3.9A (Ta)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
45mOhm @ 3.9A, 10V
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 5 V
Package / Case
TO-261-4, TO-261AA
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Input Capacitance (Ciss) (Max) @ Vds
530 pF @ 25 V
Mfr
Infineon Technologies
TOP
RFQ List ( 0 items)