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IRFU3707ZPBF

IRFU3707ZPBF
Infineon Technologies
MOSFET N-CH 30V 56A IPAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package
Tube
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Mfr
Infineon Technologies
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Power Dissipation (Max)
50W (Tc)
Series
HEXFET®
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 4.5 V
Supplier Device Package
IPAK (TO-251AA)
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 15 V
Mounting Type
Through Hole
Product Status
Obsolete
Vgs(th) (Max) @ Id
2.25V @ 25µA
Vgs (Max)
±20V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 15A, 10V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
56A (Tc)
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
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