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IPI04CN10N-G

Product Name IPI04CN10N-G

Manufacturer Infineon Technologies

Describe MOSFET N-CH 100V 100A TO262-3

Classification: Transistors - FETs, MOSFETs - Single

Stock Available

RoHs:

RoHS Compliant

Datasheet

Datasheet

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Available In Stock

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Product Attributes

Type PARAMETERS

Base Product Number

IPI04C

Gate Charge (Qg) (Max) @ Vgs

210 nC @ 10 V

Product Status

Obsolete

FET Type

N-Channel

Supplier Device Package

PG-TO262-3

Operating Temperature

-55°C ~ 175°C (TJ)

Mfr

Infineon Technologies

Rds On (Max) @ Id, Vgs

4.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs (Max)

±20V

Package

Tube

Drain to Source Voltage (Vdss)

100 V

Power Dissipation (Max)

300W (Tc)

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Input Capacitance (Ciss) (Max) @ Vds

13800 pF @ 50 V

FET Feature

-

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Series

OptiMOS™

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Joinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031

+86 18576417887

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