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FDV302P
FDV302P
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FDV302P

FDV302P
SMALL SIGNAL FIELD-EFFECT TRANSI
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
120mA (Ta)
Rds On (Max) @ Id, Vgs
10Ohm @ 200mA, 4.5V
Base Product Number
FDV30
Series
-
FET Type
P-Channel
Vgs(th) (Max) @ Id
1.5V @ 250µA
Mfr
Fairchild Semiconductor
Product Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Vgs (Max)
-8V
Supplier Device Package
SOT-23
Package / Case
TO-236-3, SC-59, SOT-23-3
Package
Bulk
FET Feature
-
Power Dissipation (Max)
350mW (Ta)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Gate Charge (Qg) (Max) @ Vgs
0.31 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
11000 pF @ 10 V
Mounting Type
Surface Mount
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