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RF1S630SM
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RF1S630SM

RF1S630SM
Harris Corporation
N-CHANNEL POWER MOSFET
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Mfr
Harris Corporation
Technology
MOSFET (Metal Oxide)
Package
Bulk
Drain to Source Voltage (Vdss)
200 V
Product Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Rds On (Max) @ Id, Vgs
400mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Supplier Device Package
TO-263AB
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Series
-
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 25 V
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
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