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IPP60R299CPXKSA1
IPP60R299CPXKSA1
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IPP60R299CPXKSA1

IPP60R299CPXKSA1
Infineon Technologies
MOSFET N-CH 650V 11A TO220-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Technology
MOSFET (Metal Oxide)
Base Product Number
IPP60R299
Product Status
Not For New Designs
Rds On (Max) @ Id, Vgs
299mOhm @ 6.6A, 10V
Power Dissipation (Max)
96W (Tc)
Mounting Type
Through Hole
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Vgs(th) (Max) @ Id
3.5V @ 440µA
Operating Temperature
-55°C ~ 150°C (TJ)
Mfr
Infineon Technologies
Series
CoolMOS™
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
FET Feature
-
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 100 V
Vgs (Max)
±20V
Package
Tube
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
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