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IPA65R600E6XKSA1
IPA65R600E6XKSA1
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IPA65R600E6XKSA1

IPA65R600E6XKSA1
Infineon Technologies
MOSFET N-CH 650V 7.3A TO220-FP
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Power Dissipation (Max)
28W (Tc)
Package / Case
TO-220-3 Full Pack
Current - Continuous Drain (Id) @ 25°C
7.3A (Tc)
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Product Status
Not For New Designs
Supplier Device Package
PG-TO220-FP
Base Product Number
IPA65R600
Package
Tube
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 2.1A, 10V
Mfr
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Vgs (Max)
±20V
Vgs(th) (Max) @ Id
3.5V @ 210µA
FET Feature
-
Series
CoolMOS™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
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