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BSP297H6327XTSA1
BSP297H6327XTSA1
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BSP297H6327XTSA1

BSP297H6327XTSA1
Infineon Technologies
MOSFET N-CH 200V 660MA SOT223-4
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Base Product Number
BSP297
Current - Continuous Drain (Id) @ 25°C
660mA (Ta)
FET Type
N-Channel
Mounting Type
Surface Mount
Series
SIPMOS®
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds
357 pF @ 25 V
FET Feature
-
Supplier Device Package
PG-SOT223-4
Package
Tape & Reel (TR)^^Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id
1.8V @ 400µA
Operating Temperature
-55°C ~ 150°C (TJ)
Mfr
Infineon Technologies
Power Dissipation (Max)
1.8W (Ta)
Vgs (Max)
±20V
Package / Case
TO-261-4, TO-261AA
Product Status
Active
Gate Charge (Qg) (Max) @ Vgs
16.1 nC @ 10 V
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