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IRF6655TR1PBF

Product Name IRF6655TR1PBF

Manufacturer Infineon Technologies

Describe MOSFET N-CH 100V 4.2A DIRECTFET

Classification: Transistors - FETs, MOSFETs - Single

Stock Available

RoHs:

RoHS Compliant

Datasheet

Datasheet

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Available In Stock

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Product Attributes

Type PARAMETERS

Mounting Type

Surface Mount

Package

Tape & Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds

530 pF @ 25 V

Drain to Source Voltage (Vdss)

100 V

Current - Continuous Drain (Id) @ 25°C

4.2A (Ta), 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs(th) (Max) @ Id

4.8V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

11.7 nC @ 10 V

Package / Case

DirectFET™ Isometric SH

Technology

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs

62mOhm @ 5A, 10V

FET Feature

-

Vgs (Max)

±20V

Supplier Device Package

DIRECTFET™ SH

FET Type

N-Channel

Mfr

Infineon Technologies

Product Status

Obsolete

Series

HEXFET®

Operating Temperature

-40°C ~ 150°C (TJ)

Power Dissipation (Max)

2.2W (Ta), 42W (Tc)

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Joinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031

+86 18576417887

[email protected]

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