Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. IRF7749L2TRPBF
IRF7749L2TRPBF
IRF7749L2TRPBF
IRF7749L2TRPBF
Favorite Products
Share:  

IRF7749L2TRPBF

IRF7749L2TRPBF
Infineon Technologies
MOSFET N-CH 60V 33A DIRECTFET
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Rds On (Max) @ Id, Vgs
1.5mOhm @ 120A, 10V
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Power Dissipation (Max)
3.3W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mfr
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C
33A (Ta), 375A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
12320 pF @ 25 V
FET Feature
-
Product Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate Charge (Qg) (Max) @ Vgs
300 nC @ 10 V
Package / Case
DirectFET™ Isometric L8
FET Type
N-Channel
Vgs(th) (Max) @ Id
4V @ 250µA
Series
HEXFET®
Package
Tape & Reel (TR)^^Cut Tape (CT)
Vgs (Max)
±20V
Supplier Device Package
DirectFET™ Isometric L8
Mounting Type
Surface Mount
TOP
RFQ List ( 0 items)