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SPP12N50C3HKSA1
SPP12N50C3HKSA1
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SPP12N50C3HKSA1

SPP12N50C3HKSA1
Infineon Technologies
MOSFET N-CH 560V 11.6A TO220-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-220-3
FET Type
N-Channel
Product Status
Obsolete
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Drain to Source Voltage (Vdss)
560 V
Vgs(th) (Max) @ Id
3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V
Operating Temperature
-55°C ~ 150°C (TJ)
Series
CoolMOS™
Mounting Type
Through Hole
Base Product Number
SPP12N
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
11.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V
Supplier Device Package
PG-TO220-3-1
Mfr
Infineon Technologies
Package
Tube
Rds On (Max) @ Id, Vgs
380mOhm @ 7A, 10V
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