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SPP08N50C3XKSA1
SPP08N50C3XKSA1
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SPP08N50C3XKSA1

SPP08N50C3XKSA1
Infineon Technologies
MOSFET N-CH 560V 7.6A TO220-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package
Tube
Input Capacitance (Ciss) (Max) @ Vds
750 pF @ 25 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
7.6A (Tc)
Drain to Source Voltage (Vdss)
560 V
Vgs(th) (Max) @ Id
3.9V @ 350µA
Base Product Number
SPP08N
Mfr
Infineon Technologies
FET Type
N-Channel
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
600mOhm @ 4.6A, 10V
Power Dissipation (Max)
83W (Tc)
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Series
CoolMOS™
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-220-3
Vgs (Max)
±20V
Supplier Device Package
PG-TO220-3-1
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