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SPP21N50C3HKSA1
SPP21N50C3HKSA1
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SPP21N50C3HKSA1

SPP21N50C3HKSA1
Infineon Technologies
MOSFET N-CH 560V 21A TO220-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drain to Source Voltage (Vdss)
560 V
Vgs(th) (Max) @ Id
3.9V @ 1mA
FET Feature
-
Rds On (Max) @ Id, Vgs
190mOhm @ 13.1A, 10V
Mounting Type
Through Hole
Series
CoolMOS™
Vgs (Max)
±20V
Package / Case
TO-220-3
Base Product Number
SPP21N
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
95 nC @ 10 V
Supplier Device Package
PG-TO220-3-1
Product Status
Obsolete
Input Capacitance (Ciss) (Max) @ Vds
2400 pF @ 25 V
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mfr
Infineon Technologies
Package
Tube
Power Dissipation (Max)
208W (Tc)
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