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SIDR220EP-T1-RE3
SIDR220EP-T1-RE3
SIDR220EP-T1-RE3
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SIDR220EP-T1-RE3

SIDR220EP-T1-RE3
Vishay Siliconix
N-CHANNEL 25 V (D-S) 175C MOSFET
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
92.8A (Ta), 415A (Tc)
Package / Case
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs
200 nC @ 10 V
Operating Temperature
-55°C ~ 175°C (TJ)
Supplier Device Package
PowerPAK® SO-8DC
Series
TrenchFET® Gen IV
FET Type
N-Channel
Drain to Source Voltage (Vdss)
25 V
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
10850 pF @ 10 V
Package
Tape & Reel (TR)^^Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
2.1V @ 250µA
Product Status
Active
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
6.25W (Ta), 415W (Tc)
Rds On (Max) @ Id, Vgs
0.58mOhm @ 20A, 10V
Vgs (Max)
+16V, -12V
Mounting Type
Surface Mount
Mfr
Vishay Siliconix
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