Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. IRF7780MTRPBF
IRF7780MTRPBF
IRF7780MTRPBF
Favorite Products
Share:  

IRF7780MTRPBF

IRF7780MTRPBF
Infineon Technologies
MOSFET N-CH 75V 89A DIRECTFET
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Mfr
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Series
StrongIRFET™
Current - Continuous Drain (Id) @ 25°C
89A (Tc)
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
75 V
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
6504 pF @ 25 V
Base Product Number
IRF7780
Mounting Type
Surface Mount
Product Status
Last Time Buy
Rds On (Max) @ Id, Vgs
5.7mOhm @ 53A, 10V
Supplier Device Package
DirectFET™ Isometric ME
Gate Charge (Qg) (Max) @ Vgs
186 nC @ 10 V
Power Dissipation (Max)
96W (Tc)
Package / Case
DirectFET™ Isometric ME
Package
Tape & Reel (TR)^^Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Vgs(th) (Max) @ Id
3.7V @ 150µA
FET Feature
-
TOP
RFQ List ( 0 items)