Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. IRFS4229TRLPBF
IRFS4229TRLPBF
IRFS4229TRLPBF
Favorite Products
Share:  

IRFS4229TRLPBF

IRFS4229TRLPBF
Infineon Technologies
MOSFET N-CH 250V 45A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Product Status
Active
Current - Continuous Drain (Id) @ 25°C
45A (Tc)
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Mfr
Infineon Technologies
Base Product Number
IRFS4229
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Series
HEXFET®
Drain to Source Voltage (Vdss)
250 V
Vgs (Max)
±30V
Supplier Device Package
PG-TO263-3
Package
Tape & Reel (TR)^^Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On)
10V
Power Dissipation (Max)
330W (Tc)
FET Feature
-
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
48mOhm @ 26A, 10V
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
4560 pF @ 25 V
Operating Temperature
-40°C ~ 175°C (TJ)
TOP
RFQ List ( 0 items)