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FQT7N10LTF
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FQT7N10LTF

FQT7N10LTF
POWER FIELD-EFFECT TRANSISTOR, 1
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mfr
Fairchild Semiconductor
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 5 V
Product Status
Active
Series
QFET®
Package
Bulk
Vgs (Max)
±20V
Mounting Type
Surface Mount
FET Feature
-
Rds On (Max) @ Id, Vgs
350mOhm @ 850mA, 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Power Dissipation (Max)
2W (Tc)
Drain to Source Voltage (Vdss)
100 V
Supplier Device Package
SOT-223-4
Package / Case
TO-261-4, TO-261AA
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
1.7A (Tc)
Vgs(th) (Max) @ Id
2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
290 pF @ 25 V
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