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APTM100DA33T1G
APTM100DA33T1G
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APTM100DA33T1G

APTM100DA33T1G
Microsemi Corporation
MOSFET N-CH 1000V 23A SP1
Available
RoHS Compliant
Available In Stock
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Product Attributes
Type PARAMETERS
Mounting Type
Chassis Mount
Drive Voltage (Max Rds On, Min Rds On)
10V
Product Status
Obsolete
Supplier Device Package
SP1
Package / Case
SP1
Technology
MOSFET (Metal Oxide)
Mfr
Microsemi Corporation
Package
Bulk
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
Gate Charge (Qg) (Max) @ Vgs
305 nC @ 10 V
Power Dissipation (Max)
390W (Tc)
Vgs (Max)
±30V
Series
-
Drain to Source Voltage (Vdss)
1000 V
FET Feature
-
Operating Temperature
-40°C ~ 150°C (TJ)
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
396mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds
7868 pF @ 25 V
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