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IRL2203NSTRRPBF

IRL2203NSTRRPBF
Infineon Technologies
MOSFET N-CH 30V 116A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mfr
Infineon Technologies
Vgs(th) (Max) @ Id
3V @ 250µA
Rds On (Max) @ Id, Vgs
7mOhm @ 60A, 10V
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package
Tape & Reel (TR)
Product Status
Obsolete
Drain to Source Voltage (Vdss)
30 V
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
3290 pF @ 25 V
FET Feature
-
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±16V
Supplier Device Package
D2PAK
Current - Continuous Drain (Id) @ 25°C
116A (Tc)
Power Dissipation (Max)
3.8W (Ta), 180W (Tc)
Series
HEXFET®
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
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