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IRF6810STR1PBF

IRF6810STR1PBF
Infineon Technologies
MOSFET N CH 25V 16A S1
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Operating Temperature
-40°C ~ 150°C (TJ)
Package
Tape & Reel (TR)^^Cut Tape (CT)
Vgs (Max)
±16V
Supplier Device Package
DirectFET™ Isometric S1
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1038 pF @ 13 V
Product Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
16A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.2mOhm @ 16A, 10V
Package / Case
DirectFET™ Isometric S1
Mfr
Infineon Technologies
Power Dissipation (Max)
2.1W (Ta), 20W (Tc)
Series
HEXFET®
Drain to Source Voltage (Vdss)
25 V
Vgs(th) (Max) @ Id
2.1V @ 25µA
FET Feature
-
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 4.5 V
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