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IRF8302MTR1PBF
IRF8302MTR1PBF
IRF8302MTR1PBF
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IRF8302MTR1PBF

IRF8302MTR1PBF
Infineon Technologies
MOSFET N CH 30V 31A MX
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Series
HEXFET®
Package / Case
DirectFET™ Isometric MX
Vgs(th) (Max) @ Id
2.35V @ 150µA
Product Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MX
Base Product Number
IRF8302
Package
Tape & Reel (TR)^^Cut Tape (CT)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
31A (Ta), 190A (Tc)
Vgs (Max)
±20V
Mfr
Infineon Technologies
Technology
MOSFET (Metal Oxide)
FET Feature
-
Input Capacitance (Ciss) (Max) @ Vds
6030 pF @ 15 V
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.8mOhm @ 31A, 10V
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 4.5 V
Power Dissipation (Max)
2.8W (Ta), 104W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
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