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IPI120N08S403AKSA1
IPI120N08S403AKSA1
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IPI120N08S403AKSA1

IPI120N08S403AKSA1
Infineon Technologies
MOSFET N-CH 80V 120A TO262-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
Product Status
Not For New Designs
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
11550 pF @ 25 V
FET Feature
-
Mounting Type
Through Hole
Package
Tube
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ Id
4V @ 223µA
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Operating Temperature
-55°C ~ 175°C (TJ)
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2.8mOhm @ 100A, 10V
Vgs (Max)
±20V
Supplier Device Package
PG-TO262-3-1
Series
Automotive, AEC-Q101, OptiMOS™
Power Dissipation (Max)
278W (Tc)
Base Product Number
IPI120
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