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  5. IPI120N04S302AKSA1
IPI120N04S302AKSA1
IPI120N04S302AKSA1
IPI120N04S302AKSA1
IPI120N04S302AKSA1
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IPI120N04S302AKSA1

IPI120N04S302AKSA1
Infineon Technologies
MOSFET N-CH 40V 120A TO262-3
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
Product Status
Not For New Designs
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4V @ 230µA
Vgs (Max)
±20V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
2.3mOhm @ 80A, 10V
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Input Capacitance (Ciss) (Max) @ Vds
14300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
210 nC @ 10 V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IPI120
Mfr
Infineon Technologies
Mounting Type
Through Hole
Series
OptiMOS™
Package
Tube
Power Dissipation (Max)
300W (Tc)
Supplier Device Package
PG-TO262-3
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