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TK3A60DA-Q-M
TK3A60DA-Q-M
TK3A60DA-Q-M
TK3A60DA-Q-M
TK3A60DA-Q-M
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TK3A60DA-Q-M

TK3A60DA-Q-M
MOSFET N-CH 600V 2.5A TO220SIS
Available
RoHS Compliant
Available In Stock
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Product Attributes
Type PARAMETERS
Rds On (Max) @ Id, Vgs
2.8Ohm @ 1.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds
380 pF @ 25 V
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 10 V
Power Dissipation (Max)
30W (Tc)
Operating Temperature
150°C (TJ)
Supplier Device Package
TO-220SIS
Product Status
Active
Vgs (Max)
±30V
Package / Case
TO-220-3 Full Pack
Mfr
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss)
600 V
Series
π-MOSVII
Vgs(th) (Max) @ Id
4.4V @ 1mA
Package
Tube
FET Feature
-
Mounting Type
Through Hole
Base Product Number
TK3A60
Drive Voltage (Max Rds On, Min Rds On)
10V
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