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TK8A60DA-STA4-Q-M
TK8A60DA-STA4-Q-M
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TK8A60DA-STA4-Q-M

TK8A60DA-STA4-Q-M
MOSFET N-CH 600V 7.5A TO220SIS
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RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Power Dissipation (Max)
45W (Tc)
Product Status
Obsolete
Mfr
Toshiba Semiconductor and Storage
Supplier Device Package
TO-220SIS
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±30V
FET Feature
-
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1Ohm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Base Product Number
TK8A60
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
7.5A (Ta)
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1050 pF @ 25 V
Operating Temperature
150°C (TJ)
Drain to Source Voltage (Vdss)
600 V
Series
π-MOSVII
Package
Tube
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