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2N6661JTX02
2N6661JTX02
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2N6661JTX02

2N6661JTX02
Vishay Siliconix
MOSFET N-CH 90V 860MA TO39
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mfr
Vishay Siliconix
Rds On (Max) @ Id, Vgs
4Ohm @ 1A, 10V
Vgs (Max)
±20V
Series
-
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
Mounting Type
Through Hole
Supplier Device Package
TO-39
Package / Case
TO-205AD, TO-39-3 Metal Can
FET Feature
-
Package
Tube
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
90 V
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Product Status
Obsolete
Base Product Number
2N6661
FET Type
N-Channel
Current - Continuous Drain (Id) @ 25°C
860mA (Tc)
Vgs(th) (Max) @ Id
2V @ 1mA
Power Dissipation (Max)
725mW (Ta), 6.25W (Tc)
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