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APT10M09B2VFRG
APT10M09B2VFRG
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APT10M09B2VFRG

APT10M09B2VFRG
Microsemi Corporation
MOSFET N-CH 100V 100A T-MAX
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Power Dissipation (Max)
625W (Tc)
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Mfr
Microsemi Corporation
Drive Voltage (Max Rds On, Min Rds On)
10V
Series
POWER MOS V®
Package
Tube
Drain to Source Voltage (Vdss)
100 V
Rds On (Max) @ Id, Vgs
9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 2.5mA
Vgs (Max)
±30V
Mounting Type
Through Hole
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Product Status
Obsolete
Gate Charge (Qg) (Max) @ Vgs
350 nC @ 10 V
Supplier Device Package
T-MAX™ [B2]
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
9875 pF @ 25 V
Package / Case
TO-247-3 Variant
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