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APTC60DAM35T1G
APTC60DAM35T1G
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APTC60DAM35T1G

APTC60DAM35T1G
Microsemi Corporation
MOSFET N-CH 600V 72A SP1
Available
RoHS Compliant
Available In Stock
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Product Attributes
Type PARAMETERS
Package
Bulk
Current - Continuous Drain (Id) @ 25°C
72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
35mOhm @ 72A, 10V
Vgs (Max)
±20V
Package / Case
SP1
Product Status
Obsolete
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SP1
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs
518 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
14000 pF @ 25 V
Mfr
Microsemi Corporation
Drain to Source Voltage (Vdss)
600 V
FET Feature
-
Power Dissipation (Max)
416W (Tc)
Series
-
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