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BSC052N03S-G

BSC052N03S-G
Infineon Technologies
MOSFET N-CH 30V 18A/80A TDSON
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
18A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Power Dissipation (Max)
2.8W (Ta), 54W (Tc)
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerTDFN
Mfr
Infineon Technologies
Input Capacitance (Ciss) (Max) @ Vds
2820 pF @ 15 V
Supplier Device Package
PG-TDSON-8-6
Product Status
Obsolete
Rds On (Max) @ Id, Vgs
5.2mOhm @ 50A, 10V
Drain to Source Voltage (Vdss)
30 V
Vgs(th) (Max) @ Id
2V @ 40µA
Vgs (Max)
±20V
FET Feature
-
Series
OptiMOS™
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 5 V
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