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BSP170PE6327

BSP170PE6327
Infineon Technologies
MOSFET P-CH 60V 1.9A SOT223-4
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Rds On (Max) @ Id, Vgs
300mOhm @ 1.9A, 10V
Package
Tape & Reel (TR)^^Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds
410 pF @ 25 V
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4
Product Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id
4V @ 250µA
Current - Continuous Drain (Id) @ 25°C
1.9A (Ta)
Package / Case
TO-261-4, TO-261AA
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±20V
Series
SIPMOS®
FET Type
P-Channel
Power Dissipation (Max)
1.8W (Ta)
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