Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. BSP170PE6327T
BSP170PE6327T
BSP170PE6327T
Favorite Products
Share:  

BSP170PE6327T

BSP170PE6327T
Infineon Technologies
MOSFET P-CH 60V 1.9A SOT223-4
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Input Capacitance (Ciss) (Max) @ Vds
410 pF @ 25 V
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Drain to Source Voltage (Vdss)
60 V
Rds On (Max) @ Id, Vgs
300mOhm @ 1.9A, 10V
Mfr
Infineon Technologies
FET Feature
-
Vgs (Max)
±20V
Product Status
Discontinued at Digi-Key
Current - Continuous Drain (Id) @ 25°C
1.9A (Ta)
Series
SIPMOS®
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Package
Tape & Reel (TR)^^Cut Tape (CT)
FET Type
P-Channel
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
PG-SOT223-4
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
TOP
RFQ List ( 0 items)