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  5. BUK653R5-55C-127
BUK653R5-55C-127
BUK653R5-55C-127
BUK653R5-55C-127
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BUK653R5-55C-127

BUK653R5-55C-127
NXP USA Inc.
MOSFET N-CH 55V 120A TO220AB
Available
RoHS Compliant
Available In Stock
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Product Attributes
Type PARAMETERS
Mfr
NXP USA Inc.
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
191 nC @ 10 V
Power Dissipation (Max)
263W (Tc)
Package / Case
TO-220-3
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
FET Feature
-
Series
TrenchMOS™
Rds On (Max) @ Id, Vgs
3.9mOhm @ 25A, 10V
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Base Product Number
BUK65
Product Status
Obsolete
Input Capacitance (Ciss) (Max) @ Vds
11516 pF @ 25 V
Drain to Source Voltage (Vdss)
55 V
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±16V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Supplier Device Package
TO-220AB
Package
Tube
FET Type
N-Channel
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