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  5. BUK751R6-30E-127
BUK751R6-30E-127
BUK751R6-30E-127
BUK751R6-30E-127
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BUK751R6-30E-127

BUK751R6-30E-127
NXP USA Inc.
MOSFET N-CH 30V 120A TO220AB
Available
RoHS Compliant
Available In Stock
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Product Attributes
Type PARAMETERS
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
BUK75
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Vgs (Max)
±20V
Power Dissipation (Max)
349W (Tc)
Supplier Device Package
TO-220AB
Package
Tube
Product Status
Obsolete
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
154 nC @ 10 V
Mounting Type
Through Hole
Series
TrenchMOS™
Drive Voltage (Max Rds On, Min Rds On)
10V
Input Capacitance (Ciss) (Max) @ Vds
11960 pF @ 25 V
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
1.6mOhm @ 25A, 10V
Package / Case
TO-220-3
Mfr
NXP USA Inc.
FET Feature
-
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