Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. EPC2034C
EPC2034C
EPC2034C
Favorite Products
Share:  

EPC2034C

EPC2034C
EPC
GANFET N-CH 200V 48A DIE
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Power Dissipation (Max)
-
Current - Continuous Drain (Id) @ 25°C
48A (Ta)
Rds On (Max) @ Id, Vgs
8mOhm @ 20A, 5V
Mounting Type
Surface Mount
Mfr
EPC
Package
Tape & Reel (TR)^^Cut Tape (CT)
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
5V
Vgs (Max)
+6V, -4V
Operating Temperature
-40°C ~ 150°C (TJ)
Base Product Number
EPC2034
Product Status
Active
Input Capacitance (Ciss) (Max) @ Vds
1140 pF @ 100 V
Series
eGaN®
Package / Case
Die
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
200 V
Supplier Device Package
Die
Vgs(th) (Max) @ Id
2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 5 V
TOP
RFQ List ( 0 items)