[email protected]
+86 18576417887
86-18576417887
guoyaolong520
Products
  • Products
  • News
  • Manufacturer
0 item (s)
RFQ Inquiry

Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. FQA7N80-F109
FQA7N80-F109
FQA7N80-F109
Favorite Products
Share:  

FQA7N80-F109

FQA7N80-F109
onsemi
MOSFET N-CH 800V 7.2A TO3P
Transistors - FETs, MOSFETs - Single
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Input Capacitance (Ciss) (Max) @ Vds
1850 pF @ 25 V
Product Status
Obsolete
Base Product Number
FQA7
FET Feature
-
Supplier Device Package
TO-3P
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.5Ohm @ 3.6A, 10V
Series
QFET®
Current - Continuous Drain (Id) @ 25°C
7.2A (Tc)
Vgs(th) (Max) @ Id
5V @ 250µA
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
198W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
Drain to Source Voltage (Vdss)
800 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Package / Case
TO-3P-3, SC-65-3
Vgs (Max)
±30V
Mfr
onsemi
Mounting Type
Through Hole
Related Products
SIJA52ADP-T1-GE3

Vishay Siliconix
RFP12N18

Harris Corporation
BSS119-E6433

Infineon Technologies
BSZ021N04LS6ATMA1

Infineon Technologies
SIHA105N60EF-GE3

Vishay Siliconix
STW50N65DM2AG

STMicroelectronics
2SK3670-T6CANO-F-M

Toshiba Semiconductor and Storage
AUIRFS3206

Infineon Technologies

Send
Support
Resources
Contact Us
Joinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031
5 4 3 2 1
Sitemap

©2016 - 2023 Joinwin Electronics HK Limited All rights reserved

(93638)
TOP
RFQ List ( 0 items)