Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. FQAF10N80
FQAF10N80
FQAF10N80
Favorite Products
Share:  

FQAF10N80

FQAF10N80
MOSFET N-CH 800V 6.7A TO3PF
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Mfr
Fairchild Semiconductor
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
Product Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
6.7A (Tc)
Package / Case
TO-3P-3 Full Pack
FET Feature
-
Power Dissipation (Max)
113W (Tc)
Supplier Device Package
TO-3PF
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
71 nC @ 10 V
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.05Ohm @ 3.35A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 25 V
Series
QFET®
Drain to Source Voltage (Vdss)
800 V
Vgs (Max)
±30V
Mounting Type
Through Hole
TOP
RFQ List ( 0 items)