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FQI32N20CTU

FQI32N20CTU
MOSFET N-CH 200V 28A I2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Current - Continuous Drain (Id) @ 25°C
28A (Tc)
Series
QFET®
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
82mOhm @ 14A, 10V
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Mfr
Fairchild Semiconductor
Power Dissipation (Max)
3.13W (Ta), 156W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2220 pF @ 25 V
Mounting Type
Through Hole
Supplier Device Package
I2PAK (TO-262)
Drain to Source Voltage (Vdss)
200 V
Product Status
Obsolete
Vgs (Max)
±30V
FET Feature
-
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id
4V @ 250µA
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