Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. FQI34P10TU
FQI34P10TU
FQI34P10TU
Favorite Products
Share:  

FQI34P10TU

FQI34P10TU
onsemi
MOSFET P-CH 100V 33.5A I2PAK
Available
RoHS Compliant
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Mounting Type
Through Hole
Mfr
onsemi
Series
QFET®
Package
Tube
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±25V
Operating Temperature
-55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds
2910 pF @ 25 V
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number
FQI3
FET Feature
-
Product Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
33.5A (Tc)
Rds On (Max) @ Id, Vgs
60mOhm @ 16.75A, 10V
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Power Dissipation (Max)
3.75W (Ta), 155W (Tc)
Supplier Device Package
I2PAK (TO-262)
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
TOP
RFQ List ( 0 items)