Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

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FQI3N40TU

FQI3N40TU
onsemi
MOSFET N-CH 400V 2.5A I2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Input Capacitance (Ciss) (Max) @ Vds
230 pF @ 25 V
Mfr
onsemi
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 10 V
Supplier Device Package
I2PAK (TO-262)
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3.4Ohm @ 1.25A, 10V
Package
Tube
Drain to Source Voltage (Vdss)
400 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status
Obsolete
Vgs(th) (Max) @ Id
5V @ 250µA
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 55W (Tc)
Series
QFET®
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
2.5A (Tc)
Vgs (Max)
±30V
Base Product Number
FQI3
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