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FQI6N50TU
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FQI6N50TU

FQI6N50TU
MOSFET N-CH 500V 5.5A I2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Product Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Vgs (Max)
±30V
Vgs(th) (Max) @ Id
5V @ 250µA
Supplier Device Package
I2PAK (TO-262)
Package
Tube
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 25 V
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Mfr
Fairchild Semiconductor
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.3Ohm @ 2.8A, 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Power Dissipation (Max)
3.13W (Ta), 130W (Tc)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Series
QFET®
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
FET Feature
-
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