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FQI7N60TU
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FQI7N60TU

FQI7N60TU
POWER FIELD-EFFECT TRANSISTOR, 7
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mfr
Fairchild Semiconductor
Mounting Type
Through Hole
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±30V
Series
QFET®
Package
Bulk
Power Dissipation (Max)
3.13W (Ta), 142W (Tc)
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
1Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
I2PAK (TO-262)
Product Status
Active
FET Feature
-
Drain to Source Voltage (Vdss)
600 V
Input Capacitance (Ciss) (Max) @ Vds
1430 pF @ 25 V
Base Product Number
FQI7N60
Current - Continuous Drain (Id) @ 25°C
7.4A (Tc)
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