Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

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FQP8P10
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FQP8P10

FQP8P10
POWER FIELD-EFFECT TRANSISTOR, 8
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Series
QFET®
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Operating Temperature
-55°C ~ 175°C (TJ)
Product Status
Active
FET Type
P-Channel
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Mfr
Fairchild Semiconductor
Supplier Device Package
TO-220-3
Drain to Source Voltage (Vdss)
100 V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Package / Case
TO-220-3
Package
Bulk
Rds On (Max) @ Id, Vgs
530mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 25 V
Power Dissipation (Max)
65W (Tc)
FET Feature
-
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