Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. FQPF9P25
FQPF9P25
FQPF9P25
Favorite Products
Share:  

FQPF9P25

FQPF9P25
onsemi
MOSFET P-CH 250V 6A TO220F-3
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Package
Tube
FET Feature
-
Product Status
Active
Rds On (Max) @ Id, Vgs
620mOhm @ 3A, 10V
Mounting Type
Through Hole
Mfr
onsemi
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Vgs(th) (Max) @ Id
5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Base Product Number
FQPF9
Series
QFET®
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Drain to Source Voltage (Vdss)
250 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1180 pF @ 25 V
Power Dissipation (Max)
50W (Tc)
FET Type
P-Channel
TOP
RFQ List ( 0 items)