Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

Favorite Products

Share:

G01N20LE

Product Name G01N20LE

Manufacturer Goford Semiconductor

Describe N200V,RD(MAX)<850M@10V,RD(MAX)<9

Classification: Transistors - FETs, MOSFETs - Single

Stock Available

RoHs:

RoHS Compliant

Datasheet

Datasheet

Customer Reference

Available In Stock

Please send RFQ, we will respond immediately

Just Fill in the content with an*

Contact Information

(You can also Log In and fill in automatically)

Message Content *

*

Company Name

*

Contact Name

*

Telephone

*

Email *

*

Product Attributes

Type PARAMETERS

Product Status

Active

Gate Charge (Qg) (Max) @ Vgs

12 nC @ 10 V

Series

-

Current - Continuous Drain (Id) @ 25°C

1.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Vgs (Max)

±20V

Mounting Type

Surface Mount

FET Type

N-Channel

Input Capacitance (Ciss) (Max) @ Vds

580 pF @ 25 V

FET Feature

-

Power Dissipation (Max)

1.5W (Tc)

Supplier Device Package

SOT-23-3

Mfr

Goford Semiconductor

Package

Tape & Reel (TR)^^Cut Tape (CT)

Drain to Source Voltage (Vdss)

200 V

Technology

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs

850mOhm @ 1.7A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

TO-236-3, SC-59, SOT-23-3

Related Products

IRF6609TRPBF

Infineon Technologies

ISP98DP10LMXTSA1

Infineon Technologies

DMN1004UFV-7

Diodes Incorporated

NVMFS6H858NWFT1G

onsemi

NP82N03PUG-E1-AY

Renesas Electronics America Inc

IRFR2407TR

Infineon Technologies

FQP8P10

onsemi

MCA03N06-TP

Micro Commercial Co

Joinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031

+86 18576417887

[email protected]

(93638)

Contact Us

WhatsApp:

86-18576417887

telephone:

+86 18576417887

E-Mail:

[email protected]

Skype:

guoyaolong520

TOP

RFQ List ( 0 items)