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G10N10A

G10N10A
Goford Semiconductor
N100V,RD(MAX)130mOHM@10V,TO-252
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Mfr
Goford Semiconductor
Package
Tape & Reel (TR)^^Cut Tape (CT)
Drain to Source Voltage (Vdss)
100 V
Vgs(th) (Max) @ Id
3V @ 250µA
Vgs (Max)
±20V
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds
690 pF @ 25 V
Product Status
Active
FET Type
N-Channel
Supplier Device Package
TO-252 (D-Pak)
Series
-
Rds On (Max) @ Id, Vgs
130mOhm @ 2A, 10V
FET Feature
-
Power Dissipation (Max)
28W (Ta)
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
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