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HUF75617D3ST

HUF75617D3ST
onsemi
MOSFET N-CH 100V 16A TO252AA
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Package
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs
90mOhm @ 16A, 10V
Series
UltraFET™
Input Capacitance (Ciss) (Max) @ Vds
570 pF @ 25 V
Operating Temperature
-55°C ~ 175°C (TJ)
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Product Status
Obsolete
Mounting Type
Surface Mount
Mfr
onsemi
FET Feature
-
Power Dissipation (Max)
64W (Tc)
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 20 V
Vgs(th) (Max) @ Id
4V @ 250µA
Base Product Number
HUF75
Technology
MOSFET (Metal Oxide)
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