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IPA65R1K0CEXKSA1
IPA65R1K0CEXKSA1
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IPA65R1K0CEXKSA1

IPA65R1K0CEXKSA1
Infineon Technologies
MOSFET N-CH 650V 7.2A TO220
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1Ohm @ 1.5A, 10V
Package / Case
TO-220-3 Full Pack
Current - Continuous Drain (Id) @ 25°C
7.2A (Tc)
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tube
FET Feature
Super Junction
Supplier Device Package
PG-TO220-FP
Product Status
Active
Mfr
Infineon Technologies
Gate Charge (Qg) (Max) @ Vgs
15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
328 pF @ 100 V
Series
CoolMOS™
Drain to Source Voltage (Vdss)
650 V
Vgs(th) (Max) @ Id
3.5V @ 200µA
Vgs (Max)
±20V
Base Product Number
IPA65R1
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
68W (Tc)
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