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IPA80R650CEXKSA2
IPA80R650CEXKSA2
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IPA80R650CEXKSA2

IPA80R650CEXKSA2
Infineon Technologies
MOSFET N-CH 800V 8A TO220-3F
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Package / Case
TO-220-3 Full Pack
Mounting Type
Through Hole
Series
CoolMOS™
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-220-3F
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Product Status
Active
Vgs (Max)
±20V
Mfr
Infineon Technologies
Package
Tube
Power Dissipation (Max)
33W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
FET Type
N-Channel
Vgs(th) (Max) @ Id
3.9V @ 470µA
Base Product Number
IPA80R650
Drain to Source Voltage (Vdss)
800 V
Rds On (Max) @ Id, Vgs
650mOhm @ 5.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 100 V
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