Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK Limited518031About Join WinJoinwin Electronics HK Limited FLAT/RM 29, 22/F, YAN’S TOWER, 25-27 WONG CHUK HANG ROAD,ABERDEEN HONGKONG Shenzhen ZhongYiYingTong Technology Limited Room 1610, Block A, Overseas Decorative Building, Zhenhua Road,Huaqiang North Street, Shenzhen, 518031Join-Win will be your one-stop purchasing assistant. Join together, achieve win-win!Joinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics HK LimitedJoinwin Electronics

  1. Home
  2. Products
  3. Discrete Semiconductor Products
  4. Transistors - FETs, MOSFETs - Single
  5. IPB13N03LB
IPB13N03LB
IPB13N03LB
Favorite Products
Share:  

IPB13N03LB

IPB13N03LB
Infineon Technologies
MOSFET N-CH 30V 30A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
Please send RFQ, we will respond immediately
Just Fill in the content with an*
Contact Information
(You can also Log In and fill in automatically)
*
*
*
*
*
Product Attributes
Type PARAMETERS
Mounting Type
Surface Mount
Vgs (Max)
±20V
Product Status
Discontinued at Digi-Key
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 175°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 5 V
Series
OptiMOS™
Power Dissipation (Max)
52W (Tc)
Mfr
Infineon Technologies
Vgs(th) (Max) @ Id
2V @ 20µA
Input Capacitance (Ciss) (Max) @ Vds
1355 pF @ 15 V
Supplier Device Package
PG-TO263-3
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Base Product Number
IPB13N
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
12.5mOhm @ 30A, 10V
FET Feature
-
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TOP
RFQ List ( 0 items)