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IPB60R380C6ATMA1
IPB60R380C6ATMA1
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IPB60R380C6ATMA1

IPB60R380C6ATMA1
Infineon Technologies
MOSFET N-CH 600V 10.6A D2PAK
Available
RoHS Compliant
Datasheet
Available In Stock
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Product Attributes
Type PARAMETERS
Product Status
Not For New Designs
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number
IPB60R380
FET Type
N-Channel
Drive Voltage (Max Rds On, Min Rds On)
10V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 100 V
Mfr
Infineon Technologies
Series
CoolMOS™
Drain to Source Voltage (Vdss)
600 V
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±20V
Power Dissipation (Max)
83W (Tc)
Technology
MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs
380mOhm @ 3.8A, 10V
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
PG-TO263-3
Vgs(th) (Max) @ Id
3.5V @ 320µA
Current - Continuous Drain (Id) @ 25°C
10.6A (Tc)
Mounting Type
Surface Mount
Package
Tape & Reel (TR)^^Cut Tape (CT)
FET Feature
-
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